ssm3k36mfv TOSHIBA Semiconductor CORPORATION, ssm3k36mfv Datasheet
ssm3k36mfv
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ssm3k36mfv Summary of contents
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... 1000 DP P (Note 1) 150 mW D °C T 150 ch −55 to 150 °C T stg and the significant change 2 ) Equivalent Circuit (top view SSM3K36MFV 1.2±0.05 0.8±0. 1:Gate 2:Source VESM 3:Drain JEDEC ― JEITA ― in TOSHIBA 2-1L1B Weight: 1.5 mg (typ.) 2008-02-29 Unit ...
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... V DD Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3K36MFV). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate-source voltage V 3 Common Source Ta = 25°C 2 1 VGS = 4.5V − 25 ° 1.0 0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM3K36MFV I – − 25 °C 25 °C Common Source 1.0 2.0 3.0 ( – (ON) D 2.5V 400 600 800 1000 200 Drain current I ...
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... C oss C rss 100 1 (V) 250 Mounted on a FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm 200 150 100 -40 -20 4 SSM3K36MFV I – Common Source −25 °C S –0.5 –1.0 –1.5 ( – Common Source ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K36MFV 20070701-EN GENERAL 2008-02-29 ...