ssm3k333r TOSHIBA Semiconductor CORPORATION, ssm3k333r Datasheet - Page 3

• Manufacturer Part Number: ssm3k333r
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos Vii-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
100
50
12
10
50
0
8
6
4
2
0
0
−50
0
0
Common Source
Pulse test
10 V
Gate–source voltage V
Drain–source voltage V
Ambient temperature Ta (°C)
0.2
0
R
DS (ON)
R
I D = 5.0 A / V GS = 10 V
0.4
DS (ON)
I
D
V GS = 4.0 V
4.5 V
– V
50
10
– V
DS
– Ta
0.6
GS
25 °C
I D =3.0A
Common Source
Pulse test
GS
Common Source
Ta = 25 °C
Pulse test
DS
100
3.0 A / 4.5 V
0.8
Ta = 100 °C
(V)
(V)
− 25 °C
150
1.0
20
3
0.0001
0.001
0.01
100
100
0.1
50
2.5
1.0
2.0
1.5
0.5
10
0
−50
1
0
1.0
0
Common Source
V DS = 10 V
Common Source
Ta = 25°C
V
Pulse test
Pulse test
4.5 V
GS
Gate–source voltage V
= 10 V
Ambient temperature Ta (°C)
Ta = 100 °C
2
Drain current I
0
2.0
4
R
DS (ON)
I
D
V
th
– V
− 25 °C
50
– Ta
6
GS
– I
D
D
25 °C
3.0
8
(A)
GS
Common Source
V DS = 10V
I D = 0.1 mA
SSM3K333R
100
(V)
10
2010-11-17
150
4.0
12