ssm3310gh Silicon Standard Corporation, ssm3310gh Datasheet

ssm3310gh

Manufacturer Part Number

ssm3310gh

Description

P-channel Enhancement-mode Power Mosfet

Manufacturer

Silicon Standard Corporation

Datasheet

1.SSM3310GH.pdf (7 pages)

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2/16/2005 Rev.2.1

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA

Rthj-c

Rthj-a

STG

The SSM3310GH is in a TO-252 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for use in low voltage battery applications. The through-hole version,

the SSM3310GJ in TO-251, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

2.5V low gate drive capability

Simple drive requirement

Pb-free; RoHS compliant.

@ T

Fast switching

@ T

Symbol

=25°C

=100°C

=25°C

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

Operating Junction Temperature Range

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

P-channel Enhancement-mode Power MOSFET

www.SiliconStandard.com

Parameter

Max.

-55 to 150

Rating

± 12

-6.2

0.2

-20

-10

-24

DS(ON)

Value

DSS

110

SSM3310GH,J

G D

TO-251 (J)

TO-252 (H)

150m

-20V

°C/W

Units

W/°C

°C/W

-10A

Unit

°C

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