ssm3310gh Silicon Standard Corporation, ssm3310gh Datasheet - Page 2

• Manufacturer Part Number: ssm3310gh
• Description: P-channel Enhancement-mode Power Mosfet
• Manufacturer: Silicon Standard Corporation

2/16/2005 Rev.2.1
Electrical Characteristics @ T
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
Source-Drain Diode
I
I
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
DSS
GSS
d(on)
r
d(off)
f
S
SM
fs
GS(th)
SD
BV
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ T j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
Parameter
Parameter
2
2
2
www.SiliconStandard.com
j
j
=25
=150
j
=25°C (unless otherwise specified)
o
C)
o
C)
1
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
j
G
D
=-2.8A
=-1A
=25°C, I
=V
=6 , V
=6
=0V, I
=-4.5V, I
=-2.5V, I
=V
=-5V, I
=-20V, V
=-16V, V
=
=-6V
=-5V
=-6V
=0V
=-6V
G
± 12V
GS
=0V , V
Test Conditions
Test Conditions
, I
D
GS
S
D
D
=-250uA
=-10A, V
=-2.8A
=-250uA
=-5V
D
D
GS
GS
=-2.8A
=-2.0A
S
=0V
=0V
=-1.2V
GS
D
=-1mA
=0V
Min. Typ. Max. Units
Min. Typ. Max. Units
-0.5
-20
-
SSM3310GH,J
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
180
-0.1
4.4
1.5
0.6
6 0
25
60
60
70
6
-
-
-
-
-
-
-
-
-
-
±100
150 m
250 m
-25
-10
-24
-1.2
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/°C
uA
uA
nA
nC
nC
nC
ns
ns
ns
pF
pF
pF
ns
V
V
S
A
A
V
2 of 7