auirfs4310z International Rectifier Corp., auirfs4310z Datasheet

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auirfs4310z

Manufacturer Part Number
auirfs4310z
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRFS4310Z
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
auirfs4310zPBF
Manufacturer:
IR
Quantity:
6 000
Part Number:
auirfs4310zTRL
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
auirfs4310zTRL
Quantity:
4 800
Company:
Part Number:
auirfs4310zTRL
Quantity:
280
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
www.irf.com
HEXFET
*Qualification standards can be found at http://www.irf.com/
Features
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
I
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
@ T
JC
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
Symbol
Symbol
C
C
C
C
®
= 25°C
= 100°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Junction-to-Case
Junction-to-Ambient (PCB Mount)
k
Parameter
Parameter
Ã
f
GS
GS
GS
AUTOMOTIVE GRADE
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
A
) is 25°C, unless otherwise specified.
j
®
G
e
Gate
G
D
S
See Fig. 14, 15, 22a, 22b,
V
R
I
I
Typ.
D
D
–––
–––
DSS
DS(on)
AUIRFS4310Z
(Silicon Limited)
(Package Limited)
D
AUIRFS4310Z
-55 to + 175
Drain
HEXFET
D
D
2
127
Pak
Max.
G
90
120
560
250
± 20
130
300
1.7
18
D
typ.
max.
S
®
Max.
0.6
40
Power MOSFET
Source
127A
4.8m
6.0m
120A
100V
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
08/22/11
W
A
V
A
1

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auirfs4310z Summary of contents

Page 1

... DSS R typ. 4.8m DS(on) max. 6.0m I 127A D (Silicon Limited) I 120A D (Package Limited Pak AUIRFS4310Z D Drain Source Max. ™ 127 ™ 90 120 560 250 1.7 ± 20 130 See Fig. 14, 15, 22a, 22b 175 300 Typ. Max. ––– 0.6 ––– ...

Page 2

Static Electrical Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Internal Gate Resistance G I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175°C 100 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 140 LIMITED BY ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche 1 ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 ...

Page 7

D.U.T + ƒ ‚ -  Fig 21 D.U 20V Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit 20K ...

Page 8

(Dimensions are shown in millimeters (inches)) www.irf.com ...

Page 9

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 1.60 (.063) 1.50 ...

Page 10

... Ordering Information Base part number Package Type AUIRFS4310Z D2Pak 10 Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRFS4310Z AUIRFS4310ZTRL AUIRFS4310ZTRR www.irf.com ...

Page 11

www.irf.com 11 ...

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