auirfs4310z International Rectifier Corp., auirfs4310z Datasheet - Page 2

• Manufacturer Part Number: auirfs4310z
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

Static Electrical Characteristics @ T
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
Notes:

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
gs
gd
sync
rr
above the Eas value and test conditions.
Symbol
Symbol
Symbol
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
(BR)DSS
temperature. Bond wire current limit is 120A. Note that current
temperature.
I
2
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
R
SD
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
= 25 , I
75A, di/dt
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 75A, V
, starting T
600A/μs, V
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.047mH
Ãd
DD
V
Parameter
Parameter
(BR)DSS
, T
J
J
g
= 25°C (unless otherwise specified)
- Q
175°C.
J
gd
= 25°C (unless otherwise specified)
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
Min.
100
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
…
†
‡
ˆ
‰
2.0
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
oss
oss
Typ. Max. Units
Typ. Max. Units
6860
Typ. Max. Units
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
0.11
–––
–––
–––
–––
–––
–––
–––
120
490
220
570
920
–––
–––
–––
4.8
0.7
2.5
29
35
85
20
60
55
57
40
49
58
89
while V
DS
127
-100
400μs; duty cycle
–––
–––
–––
–––
250
100
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
560
–––
–––
–––
–––
–––
6.0
4.0
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
m
μA
nA
nC
pF
nC
ns
ns
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A, V
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7
2%.
= V
= 50V, I
= 100V, V
= 80V, V
=50V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
DSS
, I
D
g
g
DS
DSS
S
D
DS
DS
.
D
D
= 250μA
GS
= 75A, V
= 150μA
= 75A
= 75A
=0V, V
Conditions
GS
Conditions
Conditions
= 0V to 80V
= 0V to 80V
.
= 0V, T
= 0V
V
I
di/dt = 100A/μs
F
R
= 75A
D
g
GS
= 85V,
GS
= 5mA
J
= 10V
= 125°C
= 0V
www.irf.com
i
h
G
, See Fig. 11
g
g
S
D