2sd1470attr-e Renesas Electronics Corporation., 2sd1470attr-e Datasheet - Page 2

• Manufacturer Part Number: 2sd1470attr-e
• Description: Silicon Npn Epitaxial, Darlington
• Manufacturer: Renesas Electronics Corporation.

2SD1470
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Notes: 1. Pulse test
Rev.2.00 Aug 10, 2005 page 2 of 5
Item
Symbol
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
FE
2000
Min
60
60
—
—
—
—
7
Typ
—
—
—
—
—
—
—
—
100000
Max
1.5
2.0
10
10
—
—
—
Unit
V
V
V
V
V
A
A
I
I
I
V
V
V
I
I
C
C
E
C
C
CB
EB
CE
= 500 mA, I
= 500 mA, I
= 10 A, I
= 10 A, I
= 1 mA, R
= 60 V, I
= 7 V, I
= 3 V, I
Test conditions
C
C
C
E
BE
E
= 0
= 0.5 A*
= 0
= 0
B
B
= 0
=
= 0.5 mA*
= 0.5 mA*
(Ta = 25°C)
1
1
1