as7c31024a-20tji ETC-unknow, as7c31024a-20tji Datasheet - Page 6

• Manufacturer Part Number: as7c31024a-20tji
• Description: 5v/3.3v 128kx8 Cmos Sram Evolutionary Pinout
• Manufacturer: ETC-unknow

Data retention characteristics (over the operating range)
Data retention waveform
AC test conditions
Notes
1
2
3
4
5
6
7
8
9
10 CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C=30pF, except all high Z and low Z parameters, C=5pF.
V
Chip deselect to data retention time
Operation recovery time
Input leakage current
2/6/01; V.0.9
CC
During V
This parameter is sampled and not 100% tested.
For test conditions, see AC Test Conditions, Figures A, B, and C.
t
This parameter is guaranteed, but not 100% tested.
WE is High for read cycle.
CE1 and OE are Low and CE2 is High for read cycle.
Address valid prior to or coincident with CE1 transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
CLZ
– Output load: see Figure B or Figure C.
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
CE1
V
for data retention
CC
and t
+3.0V
GND
CC
CHZ
power-up, a pull-up resistor to V
Parameter
are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.
10%
Figure A: Input pulse
90%
2 ns
90%
10%
CC
V
V
Symbol
IH
| ILI |
on CE1 is required to meet I
CC
tCDR
VDR
tR
Alliance Semiconductor
t
CDR
D
Figure B: 5V Output load
OUT
255W
CE1
V
Test conditions
IN
Data retention mode
V
CE2
V
CC
IN
V
V
V
CC
CC
= 2.0V
DR
SB
–0.2V or
–0.2V or
0.2V
0.2V
V
+5V
480W
C(14)
GND
specification.
DR
2.0V
®
Device
D
D
OUT
OUT
Thevenin equivalent:
255W
Figure C: 3.3V Output load
168W
V
V
CC
IH
Min
2.0
t
RC
0
–
t
+1.728V (5V and 3.3V)
R
+3.3V
320W
C(14)
GND
Max
AS7C31024A
–
–
–
1
AS7C1024A
P. 6 of 8
Unit
µA
ns
ns
V