2sb1721 Renesas Electronics Corporation., 2sb1721 Datasheet - Page 3

• Manufacturer Part Number: 2sb1721
• Description: Silicon Pnp Power Transistors
• Manufacturer: Renesas Electronics Corporation.

特性曲線（T
1 0 0 0
- 0.01
- 100
- 0.1
DC CURRENT GAIN vs. COLLECTOR CURRENT
1 0 0
25
20
15
10
- 10
1 0
5
0
- 1
- 0 .0 0 1
1
0
- 0.1
FORWARD BIAS SAFE OPERATING AREA
T
A
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
A
25
V
= 25°C）
I
I
= 150 °C
C (p ulse )
C (D C )
CE
- 0 .0 1
T
− 25 °C
− 50 °C
C
- Collector to Emitter Voltage - V
75 °C
25 °C
I
C
- Case Temperature - °C
50
- Collector Current - A
= − 3 A
P ow er D issipation
Lim ited
= −6 A
- 1
P W = 1 m s
- 0 .1
75
10 m s
100
- 1
- 10
125
V
P u lse d
T
S ingle pulse
C E
A
- 1 0
= − 5 .0 V
= 25°C
150
D C
データ・シート D16287JJ2V0DS
- 10 0
175
- 100
120
100
DERATING CURVE OF SAFE OPERATING AREA
80
60
40
20
- 5
- 4
- 3
- 2
- 1
- 0 .0 0 1
0
0
- 0 .0 1
0
- 0 .1
0
- 1 0
- 1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
- 0 .0 1
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
25
V
Dissipation Lim ited
CE
T
T
C
- Collector to Emitter Voltage - V
A
- 2
- Case Temperature - °C
50
= 1 5 0 °C
◊ 2 5 °C
◊ 5 0 °C
7 5 °C
2 5 °C
I
C
75
- 0 .1
- Collector Current - A
- 4
100
I
B
−100 mA
S/b Lim ited
=
−80 mA
−60 mA
−40 mA
125
−20 mA
- 6
- 1
2SB1721
I
C
150
/I
B
= 1 0 A
175
- 8
- 1 0
3