alm-32120 Avago Technologies, alm-32120 Datasheet

alm-32120

Manufacturer Part Number

alm-32120

Description

2 Watt High Linearity Amplifer

Manufacturer

Avago Technologies

Datasheet

1.ALM-32120.pdf (11 pages)

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ALM-32120

0.7GHz – 1.0GHz

2 Watt High Linearity Amplifier

Data Sheet

Description

Avago Technologies’ ALM-32120 is a high linearity 2 Watt

PA with good OIP3 performance and exceptionally good

PAE at 1dB gain compression point, achieved through the

use of Avago Technologies’ proprietary 0.25um GaAs En-

hancement-mode pHEMT process.

All matching components are fully integrated within

the module and the 50Ω RF input and output pins are

already internally AC-coupled. This makes the ALM-32120

extremely easy to use as the only external parts are DC

supply bypass capacitors.

The adjustable temperature-compensated internal bias

circuit allows the device to be operated at either class A

or class AB operation. The ALM-32120 is housed inside a

miniature 7.0 x 10.0 x 1.1 mm

board (MCOB) module package.

Component Image

7.0 x 10.0 x 1.1mm

Note:

Package marking provides orientation and identification

“32120” = Device Part Number

“WWYY” = Work week and year of manufacture

“XXXX” = Last 4 digit of lot number

Top View

WWYY

32120

XXXX

7.0 x 10.0 x 1.1 mm 3 20-Lead MCOB Package

20-Lead MCOB Package

out

20-lead multiple-chips-on-

Vdd2

Vdd1

Bottom View

Vctrl

Gnd

Features

• Fully matched, input and output

• High linearity and P1dB

• Unconditionally stable across load condition

• Built-in adjustable temperature compensated internal

• GaAs E-pHEMT Technology

• 5V supply

• Excellent uniformity in product specifications

• Tape-and-Reel packaging option available

• MSL-3 and Lead-free

• High MTTF for base station application

Specifications

900MHz; 5V, 800mA (typical)

• 14.3 dB Gain

• 52.0 dBm Output IP3

• 34.4 dBm Output Power at 1dB Gain Compression

• 50.3% PAE at P1dB

• 2.5dB Noise Figure

Applications

• Class A driver amplifier for GSM / W-CDMA / WiMAX

• General purpose gain block.

Note:

1. Enhancement mode technology employs positive gate voltage,

bias circuitry

base stations.

thereby eliminating the need of negative gate voltage associated

with conventional depletion mode devices.

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 150 V

ESD Human Body Model = 200 V

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

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