hmc659 Hittite Microwave Corporation, hmc659 Datasheet - Page 4

• Manufacturer Part Number: hmc659
• Description: Power Amplifier Chip, Dc - 15 Ghz
• Manufacturer: Hittite Microwave Corporation

Power Compression @ 2 GHz
Power Compression @ 15 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +12V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 41 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
32
28
24
20
16
12
32
28
24
20
16
12
8
4
0
8
4
0
0
0
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3
3
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
INPUT POWER (dBm)
INPUT POWER (dBm)
6
6
9
9
+9 Vdc
0 to -2 Vdc
+2V to +4V
+20 dBm
175 °C
3.69 W
24.4 °C/W
-65 to 150°C
-55 to 85 °C
Gain
Pout
PAE
v00.0807
Gain
Pout
PAE
12
12
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15
15
Power Compression @ 7 GHz
Power Dissipation
Typical Supply Current vs. Vdd
POWER AMPLIFIER, DC - 15 GHz
32
28
24
20
16
12
10
8
4
0
8
6
4
2
0
-10 -8
0
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V)
+7.5
+8.0
+8.5
-6
3
-4
-2
INPUT POWER (dBm)
INPUT POWER (dBm)
GaAs PHEMT MMIC
0
6
2
Max Pdis @ 85C
2 GHz
12 GHz
4
9
6
8
HMC659
Idd (mA)
Pout
Gain
PAE
10 12 14 16
300
299
301
12
15
3 - 125
3