hmc659 Hittite Microwave Corporation, hmc659 Datasheet - Page 6

• Manufacturer Part Number: hmc659
• Description: Power Amplifier Chip, Dc - 15 Ghz
• Manufacturer: Hittite Microwave Corporation

Pad Descriptions
Pad Number
Die Bottom
1
2
3
4
5
7
6
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20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
OUT & Vdd
Function
ACG1
ACG2
ACG3
Vgg2
Vgg1
GND
IN
RF output for amplifi er. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
capacitor per application circuit herein. For nominal
Die bottom must be connected to RF/DC ground.
capacitor per application circuit herein. Please
v00.0807
to 50 Ohms. Blocking capacitor is required.
follow “MMIC Amplifi er Biasing Procedure”
Gate control 2 for amplifi er. Attach bypass
operation +3V should be applied to Vgg2.
Low frequency termination. Attach bypass
Low frequency termination. Attach bypass
Low frequency termination. Attach bypass
Gate control 1 for amplifi er. Attach bypass
capacitor per application circuit herein.
capacitor per application circuit herein.
capacitor per application circuit herein.
Order On-line at www.hittite.com
This pad is DC coupled and matched
application note.
Description
POWER AMPLIFIER, DC - 15 GHz
GaAs PHEMT MMIC
Interface Schematic
HMC659
3 - 127
3