k4t1g084qc Samsung Semiconductor, Inc., k4t1g084qc Datasheet - Page 11

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k4t1g084qc

Manufacturer Part Number
k4t1g084qc
Description
1gb C-die Ddr2 Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
7.2 Operating Temperature Condition
7.3 Input DC Logic Level
7.4 Input AC Logic Level
7.5 AC Input Test Conditions
Note :
1.
2.
3.
K4T1G044QC
K4T1G084QC
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
V
JESD51.2 standard.
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input waveform timing is referenced to the input signal crossing through the V
The input signal minimum slew rate is to be maintained over the range from V
V
AC timings are referenced with input waveforms switching from V
negative transitions.
SWING(MAX)
V
IL
Symbol
V
Symbol
IH
SLEW
(AC) max for falling edges as shown in the below figure.
IL
Symbol
V
Symbol
V
TOPER
V
REF
IH
(AC)
IL
(AC)
(DC)
(DC)
AC input logic high
AC input logic low
Parameter
DC input logic high
DC input logic low
Parameter
Input signal maximum peak to peak swing
V
Input signal minimum slew rate
Falling Slew =
SWING(MAX)
Operating Temperature
Input reference voltage
Parameter
V
delta TF
REF
Condition
Min.
+ 0.250
DDR2-400, DDR2-533
-
V
REF
V
< AC Input Test Signal Waveform >
REF
- V
delta TF
Min.
- 0.3
IL
+ 0.125
(AC) max
V
IL
REF
(AC) to V
11 of 26
Max.
-
- 0.250
delta TR
IH
V
IH/IL
REF
V
(AC) on the positive transitions and V
Rising Slew =
REF
DDQ
Max.
(AC) level applied to the device under test.
Rating
0 to 95
to V
- 0.125
+ 0.3
IH
V
0.5 * V
REF
(AC) min for rising edges and the range from V
Value
Min.
1.0
1.0
+ 0.200
DDR2-667, DDR2-800
V
DDQ
IH
(AC) min - V
V
V
V
V
V
V
V
delta TR
DDQ
IH
IH
REF
IL
IL
SS
(DC) max
(AC) max
(AC) min
(DC) min
Units
Units
REF
V
V
V
°C
REF
Units
Max.
V/ns
- 0.200
V
V
IH
DDR2 SDRAM
(AC) to V
Rev. 1.1 June 2007
IL
(AC) on the
Notes
Notes
1, 2
Notes
Units
REF
2, 3
V
V
1
1
to

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