k4d263238e-gc Samsung Semiconductor, Inc., k4d263238e-gc Datasheet - Page 10

• Manufacturer Part Number: k4d263238e-gc
• Description: 1m X 32bit X 4 Banks Graphic Double Data Rate Synchronous Dram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

Note :
ABSOLUTE MAXIMUM RATINGS
POWER & DC OPERATING CONDITIONS(SSTL_2 In/Out)
Recommended operating conditions(Voltage referenced to V
Note :
K4D263238E-GC
Voltage on any pin relative to Vss
Voltage on V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Device Supply voltage
Output Supply voltage
Reference voltage
Termination voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VREF is expected to equal 0.50*VDDQ of the transmitting device and to track variations in the DC level of the same. Peak to
3. Vtt of the transmitting device must track VREF of the receiving device.
4. VIH(max.)= VDDQ +1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
5. VIL(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
6. For any pin under test input of 0V < VIN < VDD is acceptable. For all other pins that are not under test VIN=0V.
7. Output logic high voltage and low voltage is depend on output channel condition.
8. VDD/VDDQ = 2.8V ± 5% for K4D263238E-GC25
9. VDD/VDDQ = 2.5V ± 5% for K4D263238E-GC2A/33/36/40/45
10 . K4D263238E-GC2A/33/36 support wide voltage range from 2.375V to 2.94V.
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
peak noise on the VREF may not exceed + 2% of the DC value.
Parameter
DD
DD
Parameter
supply relative to Vss
supply relative to Vss
Symbol
V
V
V
V
V
IH(DC)
V
IL(DC)
V
I
Vtt
DDQ
REF
I
OL
DD
OH
OL
IL
V
0.49*V
V
Vtt+0.76
REF
REF
2.375
2.375
-0.30
Min
2.66
2.66
V
Symbol
-5
-5
IN
+0.15
-
-0.04
V
T
V
, V
I
P
DDQ
DDQ
STG
OS
DD
D
SS
OUT
=0V, T
- 10 -
A
=0 to 65qC)
V
Typ
2.8
2.8
2.5
2.5
REF
-
-
-
-
-
-
-
V
0.51*V
V
V
DDQ
Vtt-0.76
REF
REF
2.625
2.625
Max
2.94
2.94
-55 ~ +150
5
5
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ 3.6
+0.04
-
+0.30
-0.15
Value
DDQ
3.3
50
128M GDDR SDRAM
Unit
uA
uA
V
V
V
V
V
V
V
V
V
V
Rev 1.7 (Nov. 2003)
I
I
OL
OH
=+15.2mA, 7
=-15.2mA, 7
Unit
mA
Note
qC
W
V
V
V
1, 8
1, 9
1, 8
1, 9
2
3
4
5
6
6