k4d263238d Samsung Semiconductor, Inc., k4d263238d Datasheet - Page 11

• Manufacturer Part Number: k4d263238d
• Description: 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

AC INPUT OPERATING CONDITIONS
Recommended operating conditions Unless Otherwise Noted, T
K4D263238D
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Note: 1. Measured with outputs open.
Operating Current
Refresh Current
Self Refresh Current
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
( Burst Mode)
1. V
2. The value of V
2. Refresh period is 32ms.
Parameter
ID
is the magnitude of the difference between the input level on CK and the input level on CK
Parameter
IX
is expected to equal 0.5*V
Symbol
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC3
CC3
CC4
CC5
CC6
P
N
P
N
Burst Lenth=2
I
CKE V
CKE
t
CKE
CKE
t
I
Burst, All Banks activated.
OL
OL
CC
CC
=0mA,
=0mA ,
=
=
t
t
CC
CC
V
V
VIH(min), CS
IL
(min).
(min) .
IH
IL
DDQ
Test Condition
(max),
(max),
t
t
t
(min), CS
Symbol
RC
CC
CC
CKE
V
V
V
of the transmitting device and must track variations in the DC level of the same
=
=
V
IH
ID
IX
IL
t
t
t
t
RC
CC
CC
RFC
SS
t
t
CC
CC
(min)
(min), Page
0.2V
=0V, V
(min)
=
=
- 11 -
t
RC
t
V
t
VIH(min),
CC
CC
IH
(min)
0.5*V
(min)
(min)
(min),
DD
V
A
REF
=0 to 65 C)
/ V
Min
0.7
DDQ
+0.35
-
DDQ
-0.2
=2.5V+
5%,
245
100
100
175
630
250
-40
70
Typ
-
-
-
-
T
A
=0 to 65 C)
Version
128M DDR SDRAM
3
0.5*V
V
V
REF
DDQ
Max
DDQ
-
-0.35
215
150
530
230
-50
+0.6
60
90
80
Rev. 1.3 (Jul. 2002)
+0.2
Unit
V
V
V
V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
2
Note
1
2