k4m513233c Samsung Semiconductor, Inc., k4m513233c Datasheet - Page 10

• Manufacturer Part Number: k4m513233c
• Description: 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

K4M513233C - S(D)N/G/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
Function
Function
A12~A10/AP
A8
A9
Address
BA1
Address
0
0
1
1
0
1
0
0
1
1
Write Burst Length
A7
0
0
1
0
1
BA0
Test Mode
0
1
0
1
Mode Register Set
Single Bit
BA1
Mode Select
Length
"0" Setting for
Mode Select
Normal MRS
Burst
BA0 ~ BA1
Reserved
Reserved
Reserved
EMRS for Mobile SDRAM
Type
A9
0
BA0
Normal MRS
Reserved
Reserved
Mode
Reserved Address
A12 ~ A10/AP
A8
0
A6
0
0
0
0
1
1
1
1
A12 ~ A10/AP
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A7
0
A4
A6
0
1
0
1
0
1
0
1
RFU
0
0
1
1
A9
*1
Reserved
Reserved
Reserved
Reserved
Reserved
Driver Strength
A5
Latency
W.B.L
0
1
0
1
A9
A4
1
2
3
0
*2
A8
Driver Strength
Reserved
Reserved
A8
Test Mode
BA1 BA0
Full
A3
1/2
0
1
0
A7
10
A3
Mode Select
0
Burst Type
A7
0
Sequential
Interleave
A6
Type
mal MRS
for Nor-
A2
A6
Setting
DS
Mode
0
0
0
0
1
1
1
1
CAS Latency
A5
A1
0
0
1
1
0
0
1
1
A5
A2
0
0
0
0
1
1
1
1
A4
A0
0
1
0
1
0
1
0
1
RFU
A4
A1
0
0
1
1
0
0
1
1
*1
A3
Mobile-SDRAM
PASR
Size of Refreshed Array
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
1/2 of Full Array
1/4 of Full Array
Full Page
Reserved
Reserved
Reserved
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
BT=0
A2
1
2
4
8
Burst Length
PASR
*3
A1
A1
March 2006
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0