k4m563233g-hn75t Samsung Semiconductor, Inc., k4m563233g-hn75t Datasheet - Page 6

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k4m563233g-hn75t

Manufacturer Part Number
k4m563233g-hn75t
Description
2m X 32bit X 4 Banks Mobile Sdram In 90fbga
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K4M563233G - F(H)N/G/L/F
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
870Ω
Parameter
VDDQ
1200Ω
30pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
(V
DD
= 2.7V ∼ 3.6V, T
Output
See Figure 2
tr/tf = 1/1
2.4 / 0.4
Value
A
1.4
1.4
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
Figure 2. AC Output Load Circuit
Z0=50Ω
Mobile-SDRAM
Vtt=0.5 x VDDQ
50Ω
30pF
Unit
ns
V
V
V
February 2006

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