tpcp8105 TOSHIBA Semiconductor CORPORATION, tpcp8105 Datasheet

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tpcp8105

Manufacturer Part Number
tpcp8105
Description
Mosfets Silicon P-channel Mos U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8105
TPCP8105
1. 1. 1. 1. Applications
2. 2. 2. 2. Features
3. 3. 3. 3. Packaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (T
TPCP8105
TPCP8105
Applications
Applications
Features
Features
Packaging and Internal Circuit
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Applications
Features
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (T
(1)
(2)
(3)
(4)
Note:
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
Lithium-Ion Secondary Batteries
Power Management Switches
Notebook PCs
Small, thin package
Low drain-source on-resistance: R
Low leakage current: I
Enhancement mode: V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
PS-8
Characteristics
DSS
th
= -0.5 to -1.2 V (V
= -10 µA (max) (V
DS(ON)
(t = 5 s)
(t = 5 s)
= 13.8 mΩ (typ.) (V
a a a a
DS
= 25
= 25
= 25
= 25    unless otherwise specified)
DS
= -10 V, I
1
= -20 V)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
D
= -1 mA)
GS
= -4.5 V)
Symbol
V
V
E
T
T
P
I
I
DSS
P
I
GSS
DP
AR
D
AS
ch
stg
D
D
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
-55 to 150
Rating
-28.8
1.68
0.84
33.0
±12
-7.2
-7.2
150
-20
TPCP8105
2011-06-02
Rev.1.0
Unit
mJ
W
W
V
A
A

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