tpc8013-h TOSHIBA Semiconductor CORPORATION, tpc8013-h Datasheet
tpc8013-h
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tpc8013-h Summary of contents
Page 1
... DGR ± GSS 1 1 146 0. 150 °C ch -55 to 150 T °C stg 1 TPC8013-H Unit: mm JEDEC Š JEITA Š TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2002-03-25 ...
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... January to December are denoted by letters respectively.) Symbol Max Unit R 65.8 °C/W th (ch-a) R 125 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (unit: mm) ( TPC8013-H FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) 2002-03-25 ...
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... D Q gs1 ~ - ( 25°C) Symbol Test Condition ¾ I DRP = DSF TPC8013-H Min Typ. Max Unit ¾ ¾ ±10 mA ¾ ¾ ¾ ¾ ¾ ¾ 15 ¾ 1.1 2.3 V ¾ 6.6 9.5 mW ¾ ...
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... 0.8 0.6 0 0.2 7.5 3 Gate-source voltage (ON) 100 4 0 Drain current I 4 TPC8013-H – Common source Ta = 25°C, pulse test 2.9 2.8 2.7 2.6 2 2.4 V 1.2 1.6 2.0 (V) DS – Common source Ta = 25°C Pulse test (V) GS – I ...
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... Ambient temperature Ta (°C) Dynamic input/output characteristics 40 Common source Ta = 25° Pulse test 200 Total gate charge Q 5 TPC8013-H – Common source Ta = 25°C Pulse test -0.6 -0.8 -1 (V) DS – 120 160 ...
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... Safe operating area 100 I D max (pluse ms ms* 1 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in V DSS max temperature. 0.01 0.01 0 Drain-source voltage V ( Single pulse 0 100 Pulse width t (S) w 100 6 TPC8013-H (2) (1) 1000 2002-03-25 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 TPC8013-H 000707EAA 2002-03-25 ...