tpc8210 TOSHIBA Semiconductor CORPORATION, tpc8210 Datasheet

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tpc8210

Manufacturer Part Number
tpc8210
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Manufacturer
Quantity
Price
Part Number:
TPC8210
Manufacturer:
TOSHIBA
Quantity:
200
Part Number:
tpc8210-H
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Absolute Maximum Ratings
Low drain−source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10 s)
(Note 2a)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
D C
Pulse
Single-device
operation
Single-device value
at dual operation
Single-device
operation
Single-device value
at dual operation
GS
(Note 2a, 3b, 5)
= 20 kΩ)
DSS
th
(Note 3a)
(Note 3a)
(Note 3b)
(Note 3b)
= 1.3 to 2.5 V (V
(Note 1)
(Note 1)
(Note 4)
= 10 μA (max) (V
(Ta = 25°C)
DS (ON)
Symbol
V
P
P
P
V
V
P
fs
E
E
T
I
I
T
D (1)
D (1)
D (2)
DGR
GSS
DSS
D(2)
I
DP
AR
| = 13 S (typ.)
AS
AR
stg
D
ch
TPC8210
DS
= 11 mΩ (typ.)
DS
= 10 V, I
= 30 V)
−55 to 150
Rating
0.75
0.45
83.2
±20
150
1.5
1.1
0.1
D
30
30
32
8
8
1
= 1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.08 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1E
6
3
2007-01-16
TPC8210
5
4
Unit: mm

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tpc8210 Summary of contents

Page 1

... V GSS 1 1.1 D(2) P 0. 0.45 D ( 150 ° −55 to 150 °C stg 1 TPC8210 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration 2007-01-16 ...

Page 2

... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( Ω TPC8210 Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2007-01-16 ...

Page 3

... ≈ (Ta = 25°C) Symbol Test Condition I — DRP DSF TPC8210 Min Typ. Max — ― ±10 ― ― 30 ― ⎯ 15 1.3 ― 2.5 ⎯ 13 ― 11 6.5 13 ― 3530 ― 495 ― ...

Page 4

... Drain-source voltage V 1 0.8 0.6 0 Gate-source voltage V 100 100 4 TPC8210 I – Common source 2 25°C Pulse test 2.9 3 2.7 2.6 2.5 2.4 2 2.2 V 0.4 0.6 0.8 1.0 ( – Common source Ta = 25°C Pulse test ( – ...

Page 5

... DS 0 Pulse test 0 −80 −40 100 Dynamic input/output characteristics 200 TPC8210 I – Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 ( – ...

Page 6

... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b 0 Pulse width t ( ms* 100 6 TPC8210 (4) (3) (2) (1) 100 1000 2007-01-16 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8210 20070701-EN 2007-01-16 ...

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