tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet

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tpc8406-h

Manufacturer Part Number
tpc8406-h
Description
Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TPC8406-H
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
Absolute Maximum Ratings
Small footprint due to a small and thin package
High speed switching
Low drain-source ON-resistance: P-Channel R
Small gate charge:
High forward transfer admittance: P-Channel |Y
Low leakage current: P-Channel I
Enhancement mode
: P-Channel V
: N-Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
= −0.8 to −2.0 V (V
= 1.1 to 2.3 V (V
TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type
GS
(Note 2a, 3b, 5)
= 20 kΩ)
N-Channel I
(P-Channel/N-Channel Ultra-High-Speed U-MOSIII)
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
DS
DSS
DSS
N-Channel R
P-Channel Q
N-Channel Q
N-Channel |Y
(Ta = 25°C)
DS
Symbol
V
= 10 V, I
V
V
P
P
P
P
TPC8406-H
E
E
T
I
I
T
DGR
DSS
GSS
D(1)
D(2)
D(1)
D(2)
I
DP
AR
stg
AS
AR
D
ch
= −10 V, I
= −10 μA (V
= 10 μA (V
P-Channel N-Channel
(Note 4a)
D
−6.5
0.75
0.45
−6.5
−40
−40
±20
−26
1.5
1.1
19
= 1 mA)
DS (ON)
SW
DS (ON)
SW
D
−55 to 150
fs
fs
DS
Rating
= −1 mA)
| = 13 S (typ.)
| = 14 S (typ.)
DS
0.08
150
= 9.7 nC (typ.)
= 3.5 nC (typ.)
= 40 V)
1
= −40 V)
(Note 4b)
= 24 mΩ (typ.)
= 22 mΩ (typ.)
0.75
0.45
±20
6.5
1.5
1.1
6.5
40
40
26
19
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.085 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
N-ch
7
2
TPC8406-H
2-6J1E
2006-11-13
6
3
P-ch
5
4
Unit: mm

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tpc8406-h Summary of contents

Page 1

... GSS −6.5 I 6.5 D − 1.5 1.5 D(1) P 1.1 1.1 D( 0.75 0.75 D(1) P 0.45 0.45 D( (Note 4a) (Note 4b) −6 150 °C ch −55 to 150 T °C stg 1 TPC8406-H JEDEC ― JEITA ― V TOSHIBA 2-6J1E V Weight: 0.085 g (typ Circuit Configuration N-ch P-ch A 2006-11-13 Unit ...

Page 2

... Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 2a) dual operation R th (ch-a) (2) (Note 2b) b) Device mounted on a glass-epoxy board (b) ( Ω −6 Ω 6 TPC8406-H Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-11-13 ...

Page 3

... − 6 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = −6 DSF TPC8406-H Min Typ. Max Unit ⎯ ⎯ ±10 μA ⎯ ⎯ −10 μA −40 ⎯ ⎯ −20 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... D Q gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 6 DSF TPC8406-H Min Typ. Max Unit ⎯ ⎯ ±10 ⎯ ⎯ 10 ⎯ ⎯ 40 ⎯ ⎯ 25 ⎯ 1.1 2.3 ⎯ mΩ ⎯ ⎯ ...

Page 5

... GS 300 100 100 −10 −100 −0.1 (A) 5 TPC8406-H I – Common source Ta = 25°C −10 −4 −3.4 Pulse test −8 −6 −3.2 −4.5 −3.0 −2.8 −2 −2.4 V −0.4 −0.8 −1.2 −1.6 ...

Page 6

... C iss −1.2 C oss −0.8 C rss −0.4 0 −80 −10 −100 (V) DS −50 −40 −30 −20 −10 0 150 200 C) ° 6 TPC8406-H I – Common source Ta = 25°C −10 −4.5 −3 Pulse test − 0.2 0.4 0.6 0.8 1.0 Drain-source voltage V ( – Common source − ...

Page 7

... Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 0.01 0.1 1 Pulse width t w Single-device value at dual operation (Note 3b DSS max −10 −100 ( TPC8406-H (4) (3) (2) (1) 10 100 1000 (s) 2006-11-13 ...

Page 8

... Pulse test 16 3 2.9 2.8 2 2.6 V 0.6 0.8 1.0 (V) DS 0.5 0.4 0.3 0 300 100 100 100 ( TPC8406-H I – Common source 3 25°C 6 Pulse test 3 0.4 0.8 1.2 1.6 Drain-source voltage V ( – Common source Ta = 25℃ Pulse test 6.5 A ...

Page 9

... DS 2.5 2.0 C iss 1.5 C oss 1.0 C rss 0.5 0 −80 10 100 ( 150 200 0 9 TPC8406-H I – Common source Ta = 25°C 10 4.5 3 Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 Drain-source voltage V ( – Common source Pulse test − ...

Page 10

... Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 0.01 0.1 1 Pulse width t ( DSS max 10 100 ( TPC8406-H (4) (3) (2) (1) 単発パルス 10 100 1000 2006-11-13 ...

Page 11

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 TPC8406-H 20070701-EN 2006-11-13 ...

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