tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet

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tpc8404

Manufacturer Part Number
tpc8404
Description
Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TPC8404
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Motor Dreive
Switching Regulator Applications
Absolute Maximum Ratings
This transistor is an electrostatic sensitive device. Please handle with caution.
Low drain-source ON resistance:
High forward transfer admittance: P Channel |Y
Low leakage current:
Enhancement-mode
: P Channel V
: N Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note:
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
= −1.5~−3.5 V (V
= 1.5~3.5 V (V
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type
GS
(Note 2a, 3b, 5)
= 20 kΩ)
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(P Channel π-MOSV/N Channel π-MOSV)
DS
DS
= 10 V, I
P Channel R
N Channel R
N Channel |Y
P Channel I
N Channel I
(Ta = 25°C)
Symbol
V
V
V
P
P
P
P
= −10 V, I
E
E
T
I
I
T
DGR
DSS
GSS
D(1)
D(2)
D(1)
D(2)
I
DP
AR
stg
AS
AR
D
ch
TPC8404
D
P Channel N Channel
(Note 4a)
= 1 mA)
−250
−250
−0.9
−3.9
0.75
0.45
0.49
−0.9
±20
D
1.5
1.1
DSS
DSS
DS (ON)
DS (ON)
= −1 mA)
fs
fs
−55~150
Rating
| = 1.1 S (typ.)
| = 1.3 S (typ.)
=−100μA (V
0.11
150
= 100 μA (V
1
(Note 4b)
= 1.85 Ω (typ.)
= 1.2 Ω (typ.)
0.75
0.45
0.49
250
250
±20
1.1
4.4
1.5
1.1
1.1
DS
DS
Unit
= −250V)
mJ
mJ
°C
°C
W
V
V
V
A
A
= 250V)
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
N-ch
7
2
2-6J1E
2006-12-27
TPC8404
6
3
P-ch
5
4
Unit: mm

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tpc8404 Summary of contents

Page 1

... I 1.1 D −3 1.5 1.5 D(1) P 1.1 1.1 D(2) P 0.75 0.75 D(1) P 0.45 0.45 D(2) 0.49 0. (Note 4a) (Note 4b) −0 150 ch −55~150 T stg 1 TPC8404 = −250V) = 250V) Unit V V JEDEC ― V JEITA ― A TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration N-ch P-ch °C °C 2006-12-27 Unit ...

Page 2

... Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 2a) dual operation R th (ch-a) (2) (Note 2b) b) Device mounted on a glass-epoxy board (b) ( Ω −0 Ω 1 TPC8404 Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-12-27 ...

Page 3

... Symbol Test Condition ⎯ I DRP = −0 DSF −0 /dt = -100A/μ TPC8404 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ −100 = 0 V −250 ⎯ ⎯ −1.5 ⎯ −3.5 ⎯ 1.85 2.55 ⎯ 0.4 1.1 ⎯ ...

Page 4

... Symbol Test Condition ⎯ I DRP = 1 DSF 1 /dt = 100 A/μ TPC8404 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ 250 ⎯ 1.5 ⎯ 1.2 0.5 1.3 ⎯ 267 = MHz ⎯ ...

Page 5

... GS 10 Common source Tc = 25° Pulse test 3 1 0.5 0.3 0.1 −3 −5 −10 −0.01 (A) 5 TPC8404 I – −6 −5.5 −8 −15 −10 −5 −4 −4 V −5 −10 −15 −20 Drain-source voltage V ( – ...

Page 6

... C oss −3 C rss −2 −1 0 −80 −10 −30 −100 (V) DS 300 - (Note 2a) (Note 2b) - 200 - 100 0 150 200 0 6 TPC8404 I – Common source Tc = 25°C Pulse test −10 V −5 V − 0.2 0.4 0.6 0.8 1.0 1.2 Drain-source voltage V ( – Common source − − ...

Page 7

... DUAL OPERATION (NOTE 3b) 0.8 0.6 1ms* 0.4 0.2 0.0 V max. DSS 100 1000 - - V (V) TPC8404 (4) (3) (2) (1) 10 100 1000 E -T AS ch 100 CHANNEL TEMPERATURE Tch(℃) B VDSS − ...

Page 8

... Drain current I 6 4.6 4 −55° ( 100 0.5 0 TPC8404 I – Common source 25°C 8 Pulse test Drain-source voltage V ( – Common source Tc = 25°C ...

Page 9

... 0.1 80 120 160 (° iss C oss C rss 10 30 100 (V) DS 300 (Note 2a) (Note 2b) 200 100 0 150 200 9 TPC8404 I – Common source Tc = 25°C Pulse test −1 3 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0 Drain-source voltage V ( – ...

Page 10

... V − Ω TPC8404 (4) (3) C 100 1000 EAS-Tch 100 125 CHANNEL TEMPERATURE Tch(℃) B VDSS I AR ...

Page 11

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 TPC8404 20070701-EN 2006-12-27 ...

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