tpca8019-h TOSHIBA Semiconductor CORPORATION, tpca8019-h Datasheet - Page 4

• Manufacturer Part Number: tpca8019-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
50
40
30
20
10
90
72
54
36
18
10
0
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
8
10
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
0.2
1
4
6
4.5
5
1
Ta = −55°C
Drain current I
0.4
2
⎪Y
I
I
3.4
D
D
fs
100
– V
– V
⎪ – I
10
100
DS
GS
0.6
D
3
25
D
3.3
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
100
Ta = −55°C
25
0.8
V GS = 2.8V
4
(V)
(V)
3.2
3.1
3
1000
1
5
4
100
0.4
0.3
0.2
0.1
80
60
40
20
10
0
0
1
8
0.1
10
0
0
Common source
Ta = 25°C
Pulse test
4
6
Drain-source voltage V
Gate-source voltage V
5
4.5
1
2
Drain current I
1
3.6
R
V
DS (ON)
2
4
V GS = 10V
I
DS
D
– V
4.5
– V
DS
GS
– I
3
6
D
3.5
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
3.4
TPCA8019-H
V GS = 2.8V
I D = 45 A
4
(V)
(V)
8
11
23
2007-12-26
3.2
3.1
3.3
100
10
5