t1g6003028-sp TriQuint Semiconductor, t1g6003028-sp Datasheet
t1g6003028-sp
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t1g6003028-sp Summary of contents
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... Available Package Top Package Information Package Type Description SP Ordering Information Material No. Part No. ) discrete 3dB 1074565 T1G6003028-SP 1076439 T1G6003028-SP 1076612 T1G6003028-SP – 1 – Connecting the digital World to the Global Network® Bottom Base 9mm ceramic air cavity CuW package Description Packaged part Standard evaluation ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Specifications Absolute Maximum Ratings Sym Parameter V Positive Supply Value + V Negative Supply Voltage Range - I Positive Supply Current |I | Gate Supply Current G P Power Dissipation D T Operating Channel Temperature CH Operation of this device outside the parameter ranges given above may cause permanent damage. 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET7 25 Preliminary Data Sheet: Rev. G 6/24/2010 Copyright © 2010 TriQuint Semiconductor, Inc. ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Electrical Specifications Recommended operating conditions apply unless otherwise specified Characteristics Characteristics Break-Down Voltage Drain Source Gate Quiescent Voltage Gate Threshold Voltage Saturated Drain Current RF Characteristics Characteristics Functional Tests, Instantaneous Bandwidth (Tested in TriQuint’s Eval Board, 5.3 GHz to 5.9 GHz, 100uS, 20%) Gain @ P , 5.3 GHz to 5.9 GHz 2dB ( =150 mA) DS out 5.3 GHz to 5.9 GHz 2dB ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Electrical Specifications (continued) Recommended operating conditions apply unless otherwise specified Characteristics Characteristics Functional Tests, Narrow Band EVB RF Performance (3.5 GHz), CW Linear Gain (V = 3dB, I =100 mA LIN 3dB DQ Output Power Gain Compression (V = =100 mA 3dB DQ Drain Efficiency Gain Compression (V = =100 mA), CW ...
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... Device Characterization Data S-Parameter Smith Chart Small Signal Gain Preliminary Data Sheet: Rev. G 6/24/2010 Copyright © 2010 TriQuint Semiconductor, Inc. T1G6003028-SP, 28V, 100mA j10 j5 6000 MHz j2 6000 MHz S22 S11 −j2 −j5 −j10 T1G6003028-SP T1G6003028− ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor S-Parameter Data Freq. [GHz] Real S11 Imag S11 0.1 0.056 -0.882 0.2 -0.471 -0.786 0.3 -0.692 -0.608 0.4 -0.782 -0.474 0.5 -0.826 -0.387 0.6 -0.861 -0.331 0.7 -0.881 -0.274 0.8 -0.890 -0.235 0.9 -0.898 -0.205 1.0 -0.907 -0.183 1.1 -0.912 -0.164 1.2 -0.916 -0.139 1.3 -0.918 -0.120 1 ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Device Characterization Data Load-Pull Data Test conditions 100 mA, Test signal = −j1 −j2.5 RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system Preliminary Data Sheet: Rev. G 6/24/2010 Copyright © 2010 TriQuint Semiconductor, Inc. ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Load-Pull Data Freq. [GHz] Real(ZS) Imag(ZS) 0.5 1.15 15.79 0.6 1.15 12.72 0.7 1.15 10.46 0.8 1.15 8.71 0.9 1.15 7.29 1.0 1.15 6.11 1.1 1.15 5.27 1.2 1.15 4.54 1.3 1.15 3.89 1.4 1.15 3.32 1.5 1.15 2.81 1.6 1.15 2.34 1.7 1.15 1.91 1.8 1.15 1.51 1.9 1.15 1.13 2.0 1.15 0.78 2.1 1.15 0.51 2.2 1.15 0.25 2.3 1.15 0.01 2.4 1.15 -0.22 2.5 1.15 -0.45 2.6 1.15 -0.72 2.7 1.15 -0.98 2.8 1.15 -1.23 2.9 1.15 -1.47 3.0 1.15 -1.71 3.1 1.15 -1.96 3.2 1.15 -2.21 3.3 1.15 -2.44 3.4 1.15 -2.68 3.5 1.15 -2.90 3.6 1.15 -3.22 3.7 1.15 -3.53 3.8 1.15 -3.84 3.9 1.15 -4.14 4.0 1.15 -4.43 4.1 1.15 -4.72 4.2 1.15 -5.01 4.3 1.15 -5.29 4.4 1.15 -5.56 4.5 1.15 -5.84 4.6 1.15 -6.27 4.7 1.15 -6.69 4.8 1.15 -7.11 4.9 1.15 -7.52 5.0 1.15 -7.93 5.1 1.15 -8.36 5.2 1.15 -8.80 5.3 1.15 -9.22 5.4 1.15 -9.65 5.5 1.15 -10.07 5.6 1.15 -10.78 5.7 1.15 -11.48 5.8 1.15 -12.18 5.9 1.15 -12.87 6.0 1.15 -13.55 Preliminary Data Sheet: Rev. G 6/24/2010 Copyright © 2010 TriQuint Semiconductor, Inc. Real(ZL) Imag(ZL) G3dB [dB] P3dB [dBm] 14.54 5.36 23.2 13.57 5.74 21.9 12.66 5.97 20.8 11.82 6.08 20.0 11.07 6.09 19.4 10.38 6.04 19.0 9.78 5.93 18.7 9.23 5.78 18.4 8.75 5.61 18.1 8.32 5.41 17.8 7.93 5.20 17.4 7.59 4.99 16.9 7.29 4.77 16.2 7.01 4.54 15.6 6.77 4.32 15.1 6.55 4.09 14.7 6.35 3.86 14.5 6.18 3.64 14.4 6.02 3.42 14.5 5.88 3.19 14.5 5.75 2.98 14.4 5.63 2.76 14.2 5.52 2.54 13.9 5.42 2.33 13.5 5.34 2.12 13.1 5.25 1.92 12.7 5.18 1.71 12.3 5.11 1.51 12.0 5.05 1.31 11.8 4.99 1.11 11.6 4.94 0.91 11.4 4.89 0.72 11.3 4.84 0.53 11.2 4.80 0.34 11.2 4.76 0.15 11.1 4.73 -0.03 11.1 4.69 -0.22 11.0 4.66 -0.40 10.9 4.64 -0.58 10.8 4.61 -0.75 10.7 4.59 -0.93 10.5 4.58 -1.10 10.4 4.56 -1.27 10.2 4.55 -1.44 10.1 4.54 -1.61 9.9 4.54 -1.78 9.7 4.54 -1.95 9.5 4.54 -2.12 9.4 4.55 -2.29 9.2 4.56 -2.45 9.0 4.58 -2.62 8.9 4.60 -2.80 8.8 4.62 -2.97 8.7 4.64 -3.15 8.6 4.67 -3.33 8.5 4.70 -3.52 8.5 – 8 – P3dB [W] PAE [%] 44.5 28.2 44.7 29.5 44.9 30.9 45.1 32.4 45.1 32.4 45.3 33.9 45.4 34.7 45.6 36.3 45.7 37.2 45.7 37.2 45.7 37.2 45.6 36.3 45.5 35.5 45.4 34.7 45.3 33.9 45.3 33.9 45.3 33.9 45.4 34.7 45.5 35.5 45.5 35.5 45.6 36.3 45.6 36.3 45.6 36.3 45.6 36.3 45.5 35.5 45.5 35.5 45.5 35.5 45.4 34.7 45.5 35.5 45.5 35.5 45.5 35.5 45.5 35.5 45.4 34.7 45.3 33.9 45.4 34.7 45.3 33.9 45.3 33.9 45.2 33.1 45.2 33.1 45.2 33.1 45.3 33.9 45.4 34.7 45.4 34.7 45.4 34.7 45.4 34.7 45.4 34.7 45.5 35.5 45.5 35.5 45.4 34.7 45.4 34.7 45.3 33.9 45.1 32.4 45.1 32.4 44.9 30.9 44.7 29.5 44.4 27.5 Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Typical Performance: Gain, Efficiency and Output Power Performance is measured at DUT reference plane. Gain, DEff., and PAE vs. Pout Freq. = 0.5 GHz; Vds = 28 V, Idq = 100 mA; CW 5.75 + j8.84 Ω 12.11 + j4.28 Ω ...
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... Copyright © 2010 TriQuint Semiconductor, Inc. T1G6003028-SP Low Band Evaluation Board Bias: Vd=28V, IDQ=100 mA, CW 3dB Compression T1G6003028SP 500−3000 MHz Eval. Fix. RF Results @ 3dB Compression 1000 1500 2000 Freq. [MHz] T1G6003028-SP High Band Evaluation Board Bias: Vd=28V, IDQ=100 mA, CW 1dB Compression T1G6003028SP 2500−6000 MHz Eval. Fix. RF Results @ 1dB Compression 3000 3500 4000 4500 Freq. [MHz] – ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Mechanical Information Package Information and Dimensions This package is lead-free/ROHS-compliant. DRAIN 45° X .086 [2.14] .090 2.29 FLANGE GATE .320 8.13 TOP VIEW .351 8.92 LID DIM .040 1.02 .360 9.14 SIDE VIEW Preliminary Data Sheet: Rev. G 6/24/2010 Copyright © 2010 TriQuint Semiconductor, Inc. ...
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... T1G6003028-SP 25W, 28V, 20MHz-6GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided “ ...