dmp210dufb4 Diodes, Inc., dmp210dufb4 Datasheet - Page 2

• Manufacturer Part Number: dmp210dufb4
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 4) V
Pulsed Drain Current
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
DMP210DUFB4
Document number: DS35026 Rev. 2 - 2
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
Characteristic
@T
A
= 25°C unless otherwise specified
Characteristic
Characteristic
GS
GS
= -4.5V
= -1.8V
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
C
t
t
I
I
|Y
V
C
C
GS(th)
d(on)
d(off)
GSS
DSS
Steady
Steady
t
SD
oss
t
DSS
iss
rss
State
State
fs
r
f
|
T
P
= 10μs
www.diodes.com
-0.45
Min
-0.5
150
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 6
T
T
T
T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
13.72
4.01
2.34
19.3
25.9
31.5
Typ
200
7.7
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
±100
-1.15
Max
-100
11.5
17.5
-1.2
175
-50
5.5
7.5
⎯
⎯
⎯
30
20
⎯
⎯
⎯
⎯
±1
Symbol
Symbol
T
J,
V
V
R
I
P
GSS
DSS
I
I
DM
T
θ JA
D
D
D
STG
Unit
mS
nA
nA
µA
nA
pF
pF
pF
ns
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
D
GS
DS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
GS
-55 to +150
= -180mA, R
Value
= -10V, I
Value
= -16V, V
= -5.0V, V
= V
= -15V, V
= 0V, I
= ±5.0V, V
= ±8.0V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -1.5V, I
= -1.2V, I
= 0V, I
= -4.5V, V
-200
-160
-140
-110
-600
350
357
-20
±8
GS
DMP210DUFB4
, I
Test Condition
D
S
D
= -250μA
D
= -115mA
GS
D
D
D
D
D
GS
= -250μA
GS
= -200mA
DD
DS
DS
G
= -100mA
= -50mA
= -20mA
= -10mA
= -10mA
= 0V
= 0V
= 2.0Ω
= 0V
= -15V
= 0V
= 0V
© Diodes Incorporated
Units
Units
°C/W
mW
mA
mA
mA
°C
V
V
May 2011