dmp210dufb4 Diodes, Inc., dmp210dufb4 Datasheet - Page 4

• Manufacturer Part Number: dmp210dufb4
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP210DUFB4
Document number: DS35026 Rev. 2 - 2
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
1
0
-25
T , JUNCTION TEMPERATURE ( C)
V , DRAIN-SOURCE VOLTAGE (V)
0.001
Fig. 9 Typical Junction Capacitance
J
0.01
DS
4
0.1
0.00001
1
0
D = 0.01
D = 0.1
D = 0.02
D = 0.005
D = 0.7
D = 0.05
D = 0.5
D = 0.3
D = Single Pulse
25
8
0.0001
50
I = 250 A
D
I = 1mA
μ
12
D
75
0.001
100
C
f = 1MHz
C
C
rss
iss
16
oss
°
125 150
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
0.01
1
20
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D = 0.9
4 of 6
0.1
10,000
1,000
100
0.1
0.6
0.5
0.4
0.3
0.2
0.1
10
1
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0
0
0
1
2
Fig. 8 Diode Forward Voltage vs. Current
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE(V)
SD
4
DS
P(pk)
10
6
Duty Cycle, D = t /t
0.4
T - T = P * R
R
J
R
θJA
θ
JA
8
t
(t) = r(t) *
A
1
t
= 369°C/W
2
10
0.6
100
θ
T = 150 C
R
JA
A
1 2
θ
(t)
JA
12
DMP210DUFB4
T =
T =
0.8
A
T =
A
T = 25 C
°
A
14
A
1,000
85 C
-55 C
25 C
°
°
°
°
16
© Diodes Incorporated
1
18
May 2011
1.2
20