hat2116h Renesas Electronics Corporation., hat2116h Datasheet - Page 4

• Manufacturer Part Number: hat2116h
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2116H
Rev.4.00 Sep 07, 2005 page 4 of 6
100
Static Drain to Source on State Resistance
50
40
30
20
10
50
20
10
50
40
30
20
10
0
–40
0
0.2
0
V
Reverse Drain Current
I
Pulse Test
D
DS
V
Case Temperature
Dynamic Input Characteristics
= 30 A
GS
Body-Drain Diode Reverse
0.5
Gate Charge
20
= 4.5 V
0
vs. Temperature
1
10 V
Recovery Time
V
40
40
DD
2
= 25 V
di / dt = 50 A / µs
V
I
V
GS
10 V
D
DD
5 V
V
= 2 A, 5 A
2 A, 5 A, 10 A
60
5
80
= 0, Ta = 25°C
GS
Qg (nc)
= 25 V
10 V
Tc
10
5 V
I
120
DR
80
20
(
°
10 A
C)
(A)
160
100
50
20
16
12
8
4
0
10000
3000
1000
100
300
100
200
100
0.3
0.1
30
10
30
10
50
20
10
3
1
5
2
0.1
0.1 0.2
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
t d(on)
0.3
Switching Characteristics
t f
10
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
Drain Current I
Tc = –25°C
0.5
Drain Current
1
25°C
20
V
Rg = 4.7 Ω, duty ≤ 1 %
Coss
Ciss
Crss
1
GS
3
t d(off)
= 10 V, V
2
30
I
10
D
75°C
D
V
Pulse Test
DS
V
f = 1 MHz
5
(A)
GS
DS
(A)
40
= 10 V
30
DS
= 0
= 10 V
t r
10
(V)
100
50
20