hat2028rj Renesas Electronics Corporation., hat2028rj Datasheet

no-image

hat2028rj

Manufacturer Part Number
hat2028rj
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
hat2028rj-EL
Manufacturer:
HITACHI/日立
Quantity:
20 000
Part Number:
hat2028rj-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2028R, HAT2028RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.5.00 Sep 07, 2005 page 1 of 7
For Automotive Application (at Type Code “J”)
Low on-resistance
Capable of 4 V gate drive
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
2
MOS1
D
S
7 8
1
D
G
4
MOS2
D
S
5 6
3
D
(Previous: ADE-208-524C)
1, 3
2, 4
5, 6, 7, 8
REJ03G1163-0500
Source
Gate
Drain
Sep 07, 2005
Rev.5.00

Related parts for hat2028rj

hat2028rj Summary of contents

Page 1

... HAT2028R, HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching Features For Automotive Application (at Type Code “J”) Low on-resistance Capable gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> Rev.5.00 Sep 07, 2005 page ...

Page 2

... HAT2028R, HAT2028RJ Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2028R HAT2028RJ Avalanche energy HAT2028R HAT2028RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes duty cycle 2 ...

Page 3

... HAT2028R, HAT2028RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. ...

Page 4

... HAT2028R, HAT2028RJ Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.10 0. – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 100 ...

Page 5

... HAT2028R, HAT2028RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ ...

Page 6

... HAT2028R, HAT2028RJ Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.5.00 Sep 07, 2005 page Monitor D.U Vout Monitor Vin R L Vout d(on) Avalanche Waveform V 1 DSS • ...

Page 7

... HAT2028R, HAT2028RJ Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD Index mark Ordering Information Part Name HAT2028R-EL-E 2500 pcs HAT2028RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

Related keywords