hat2025r-el-e Renesas Electronics Corporation., hat2025r-el-e Datasheet
hat2025r-el-e
Available stocks
Related parts for hat2025r-el-e
hat2025r-el-e Summary of contents
Page 1
... HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching Features High speed switching Low on-resistance Capable gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.5.00 Sep 07, 2005 page ...
Page 2
... HAT2025R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the glass epoxy board (FR4 40 Electrical Characteristics ...
Page 3
... HAT2025R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. ...
Page 4
... HAT2025R Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test 4 – Case Temperature Body-Drain Diode Reverse Recovery Time 500 200 100 µ 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics ...
Page 5
... HAT2025R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.5.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test ...
Page 6
... Ordering Information Part Name HAT2025R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g ...
Page 7
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...