hat2043r Renesas Electronics Corporation., hat2043r Datasheet - Page 2

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hat2043r

Manufacturer Part Number
hat2043r
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HAT2043R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.6.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Pulse test
10 s, duty cycle
Item
Item
1%
V
Symbol
R
R
V
Coss
(BR) DSS
Crss
Ciss
t
t
Qgs
Qgd
I
GS (off)
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
Symbol
V
V
Tstg
Min
Tch
1.0
30
I
I
DSS
GSS
DR
9
D
Note 2
Note 3
Note 1
0.016
0.022
1170
0.84
Typ
390
240
190
110
14
32
22
10
32
85
35
0.022
0.029
Max
1.09
40
40
2.5
0.1
1
–55 to +150
1.6 mm), PW
1.6 mm), PW
Value
150
2.0
3.0
Unit
30
64
20
8
8
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
DS
GS
DD
GS
GS
DD
F
= 8 A, V
= 8 A, V
= 10 mA, V
= 4 A, V
= 4 A, V
= 4 A, V
= 8 A
/dt = 20 A/ s
= 30 V, V
= 10 V, I
= 10 V
= 20 V, V
= 0
= 10 V
= 10 V
= 4 V, I
10 s
10 s
Test Conditions
10 V
GS
GS
GS
GS
DS
D
D
= 0
= 0
= 10 V
= 10 V
= 4 V
= 4 A,
GS
GS
= 1 mA
DS
Unit
= 0
= 0
(Ta = 25 C)
(Ta = 25 C)
Note 4
W
W
V
V
A
A
A
= 0
C
C
Note 4
Note 4
Note 4

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