hat2202c09 Renesas Electronics Corporation., hat2202c09 Datasheet - Page 4

• Manufacturer Part Number: hat2202c09
• Description: Silicon N Channel Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2202C
Rev.5.00 Jan 26, 2006 page 4 of 6
75
60
45
30
15
Static Drain to Source on State Resistance
20
16
12
40
30
20
10
4
–25
8
0
0
0
Source to Drain Voltage V
V
V
I
D
DD
GS
Case Temperature
Dynamic Input Characteristics
= 3 A
0
Reverse Drain Current vs.
= 2.5 V
0.4
Source to Drain Voltage
4.5 V
2
Gate Charge Qg (nc)
V
5 V
25
DD
vs. Temperature
= 5 V
0.8
V
10 V
20 V
4
50
DD
3 A
= 20 V
75
10 V
V
1.2
5 V
6
GS
I
100 125 150
= 0 V
D
Tc
1, 1.5 ,3 A
Pulse Test
= 1, 1.5 A
Pulse Test
V
1.6
8
SD
GS
(°C)
(V)
2.0
10
8
6
4
2
0
1000
100
100
300
100
0.3
0.1
30
10
10
30
10
0.1
1
3
1
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
0.3
Tc = –25°C
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
5
0.3
Drain Current I
Drain Current I
Drain Current
1
10
V
Rg = 4.7 Ω, duty ≤ 1 %
GS
3
1
= 4.5 V, V
75°C
15
t d(on)
10
D
D
25°C
V
Pulse Test
t r
V
f = 1 MHz
t d(off)
Ciss
Coss
t f
3
Crss
DD
DS
(A)
(A)
GS
20
30
= 10 V
= 10 V
DS
= 0
(V)
100
25
10