hat2200wp-el-e Renesas Electronics Corporation., hat2200wp-el-e Datasheet

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hat2200wp-el-e

Manufacturer Part Number
hat2200wp-el-e
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2200WP-EL-E
Manufacturer:
RENESAS
Quantity:
2 139
Company:
Part Number:
HAT2200WP-EL-E
Quantity:
2 500
HAT2200WP
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 1 of 7
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Value at Tch = 25°C, Rg
3. Tc = 25°C
= 22 m typ. (at V
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
10 s, duty cycle
Item
5
6
GS
7
= 10 V)
8
4
1%
3
50
2 1
I
D(pulse)
E
Pch
Symbol
I
ch-c
AP
AR
V
V
Tstg
Tch
I
DSS
GSS
I
DR
Note 2
D
Note 2
Note3
Note3
G
Note1
4
D
S S S
5 6 7 8
1 2 3
D D D
–55 to +150
Ratings
6.25
100
±20
150
20
80
20
20
40
20
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G1678-0300
Source
Gate
May 27, 2008
°C/W
(Ta = 25°C)
Unit
mJ
°C
°C
W
V
V
A
A
A
A
Rev.3.00

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hat2200wp-el-e Summary of contents

Page 1

... HAT2200WP Silicon N Channel Power MOS FET Power Switching Features Capable gate drive Low drive current High density mounting Low on-resistance typ. ( DS(on) GS Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK Absolute Maximum Ratings Item Drain to source voltage ...

Page 2

... HAT2200WP Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge ...

Page 3

... HAT2200WP Main Characteristics Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 200 150 100 Gate to Source Voltage V REJ03G1678-0300 Rev ...

Page 4

... HAT2200WP Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test - Case Temperature Tc (°C) Body–Drain Diode Reverse Recovery Time 100 50 20 di/dt = 100 0.1 1 Reverse Drain Current I Dynamic Input Characteristics 250 200 V = 100 V ...

Page 5

... HAT2200WP Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 REJ03G1678-0300 Rev.3.00 May 27, 2008 Page –5 V Pulse Test 1.2 1.6 2.0 (V) SDF Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW (s) Maximum Avalanche Energy vs ...

Page 6

... HAT2200WP Avalanche Test Circuit V DS Monitor Rg Vin Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V REJ03G1678-0300 Rev.3.00 May 27, 2008 Page Monitor Vout Monitor Vin R L Vout d(on) Avalanche Waveform V DSS 1 • • ...

Page 7

... HAT2200WP Package Dimensions Package Name JEITA Package Code RENESAS Code WPAK PWSN0008DA-A 5.1 ± 0.2 1.27Typ 0.635Max 4.9 ± 0.1 Ordering Information Part No. HAT2200WP-EL-E REJ03G1678-0300 Rev.3.00 May 27, 2008 Page Previous Code MASS[Typ.] WPAKV 0.075g 0.8Max 0.04Min 0.2Typ (Ni/Pd/Au plating) Quantity 2500 pcs Unit: mm 4.21Typ 1.27Typ 3.9 ± ...

Page 8

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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