hat2203c Renesas Electronics Corporation., hat2203c Datasheet

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hat2203c

Manufacturer Part Number
hat2203c
Description
Silicon N Channel Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

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hat2203c Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... HAT2203C Silicon N Channel MOS FET Power Switching Features Low on-resistance typ.( 4.5 V) DS(on) GS Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage ...

Page 4

... HAT2203C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time ...

Page 5

... HAT2203C Main Characteristics Power vs. Temperature Derating 1600 Test Conditions: When using the glass epoxy board (FR4 1.6 mm) 1200 800 400 0 50 Case Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. ...

Page 6

... HAT2203C Static Drain to Source on State Resistance vs. Temperature 200 160 120 − Case Temperature Dynamic Input Characteristics 0.8 1.6 0 Gate Charge Reverse Drain Current vs. Source to Drain Voltage ...

Page 7

... HAT2203C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 4.5 V Rev.4.00 May.19, 2005 page Switching Time Waveform Vout Monitor R L 10% Vin V DS Vout 10 td(on) 90% 10% 90% 90% td(off ...

Page 8

... A-A Section Ordering Information Part Name HAT2203C-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 May.19, 2005 page Package Name MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g c ...

Page 9

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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