hat2265h Renesas Electronics Corporation., hat2265h Datasheet
hat2265h
Related parts for hat2265h
hat2265h Summary of contents
Page 1
... HAT2265H Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.5 m typ. ( DS(on) GS Lead Free Outline LFPAK 4 G Rev.0.00, Sept.2004, page Source ...
Page 2
... HAT2265H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes duty cycle 1% 2. Value at Tch = 25° ...
Page 3
... HAT2265H Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown V (BR)DSS voltage Gate to source breakdown V (BR)GSS voltage Gate to source leak current I GSS Zero gate voltage drain current I DSS Gate to source cutoff voltage V GS(off) Static drain to source on state R DS(on) resistance R DS(on) Forward transfer admittance ...
Page 4
... HAT2265H Package Dimensions 4.9 5.3 Max 4.0 ± 0 1.27 *0.40 ± 0.06 *Ni/Pd/Au plating Rev.0.00, Sept.2004, page +0.05 0.25 –0.03 +0.05 *0.20 –0.03 0˚ – 8˚ 0.75 Max 0.10 0.25 M Package Code JEDEC JEITA Mass (reference value January, 2003 Unit: mm 3.3 LFPAK — — 0.080 g ...
Page 5
... HAT2265H Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. ...