upa1703 Renesas Electronics Corporation., upa1703 Datasheet
upa1703
Available stocks
Related parts for upa1703
upa1703 Summary of contents
Page 1
MOS FIELD EFFECT POWER TRANSISTORS N-CHANNEL POWER MOS FET DESCRIPTION This product is N-Channel MOS Field Effect Transis- tor designed for power management applications of notebook computers. FEATURES • Super Low On-Resistance R = 10.5 m MAX. (V DS(on)1 R ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Drain to Source R DS(on)1 On-state Resistance R DS(on)2 Gate to Source Cutoff Voltage V GS(off) Forward Transfer Admittance | y Drain Leakage Current I DSS Gate to Source Leakage Current I GSS Input Capacitance ...
Page 3
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - C A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 2.0 1.6 1.2 ...
Page 4
FORWARD TRANSFER CHARACTERISTICS 100 –25 ° ° °C 125 °C 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...
Page 5
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 –50 0 100 150 Channel Temperature - °C ch CAPACITANCE vs. DRAIN ...
Page 6
REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area ...
Page 7
Data Sheet D11494EJ2V0DS PA1703 7 ...
Page 8
The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...