upa1720g Renesas Electronics Corporation., upa1720g Datasheet
upa1720g
Manufacturer Part Number
upa1720g
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1720G.pdf
(8 pages)
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Document No. G13888EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
application of notebook computers.
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1. PW
The
Low On-Resistance
R
R
R
Low C
Built-in G-S Protection Diode
Small and Surface Mount Package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
iss
PA1720G
= 25.0 m MAX. (V
= 33.0 m MAX. (V
= 38.0 m MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
iss
10 s, Duty cycle
= 800 pF TYP.
ch
Note1
= 25 °C, R
Note3
Note3
DS
A
GS
= 25 °C)
= 0)
GS
GS
GS
= 0)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
G
Power SOP8
N-CHANNEL POWER MOS FET
= 25
PACKAGE
1 %
N
ote2
The mark ! shows major revised points.
D
A
D
D
= 4.0 A)
V
= 25 °C, All terminals are connected.)
= 4.0 A)
= 4.0 A)
GS
INDUSTRIAL USE
I
DATA SHEET
D(pulse)
I
V
V
D(DC)
E
T
T
= 20 V
I
P
GSS
DSS
AS
stg
AS
ch
T
SWITCHING
2
–55 to + 150
x 2.2 mm
0 V
MOS FIELD EFFECT TRANSISTOR
±20
±32
150
2.0
8.0
6.4
30
±8
mJ
°C
°C
W
V
V
A
A
A
©
PA1720
1998, 1999
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