upa1744 Renesas Electronics Corporation., upa1744 Datasheet

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upa1744

Manufacturer Part Number
upa1744
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1744.pdf (7 pages)
Document No. G16410EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
DESCRIPTION
low on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
The
C
Low on-state resistance
R
Low input capacitance
Built-in gate protection diode
Small and surface mount package (Power HSOP8)
iss
DS(on)
= 3400 pF TYP. (V
PART NUMBER
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3. Starting T
PA1744TP is N-channel MOS FET device that features a
= 30 m
PA1744TP
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
10 s, Duty Cycle
MAX. (V
ch
= 25°C, V
Note1
C
= 25°C)
DS
GS
Note3
= 10 V, V
Note3
DS
C
A
GS
= 25°C)
= 25°C)
= 10 V, I
= 0 V)
= 0 V)
DD
N-CHANNEL POWER MOS FET
Power HSOP8
= 50 V, R
PACKAGE
GS
1%
Note2
D
= 0 V)
= 5.0 A)
A
= 25°C, Unless otherwise noted, all terminals are connected.)
G
I
D(pulse)
V
I
V
= 25
DATA SHEET
D(DC)
E
P
P
T
T
I
DSS
GSS
AS
stg
AS
T1
T2
ch
SWITCHING
MOS FIELD EFFECT TRANSISTOR
, V
GS
= 20
55 to +150
100
±20
±10
±30
150
3.0
39
10
10
0 V, L = 100 H
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE DRAWING (Unit: mm)
8
1
PA1744TP
1
8
5.2
0.40
4.1 MAX.
1.27 TYP.
+0.17
–0.2
2.0 ±0.2
+0.10
–0.05
9
5
4
4
5
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.12 M
S
0.8 ±0.2
1, 2, 3
4
5, 6, 7, 8, 9: Drain
Source
Drain
4.4 ±0.15
6.0 ±0.3
: Source
: Gate
Body
Diode
0.10
S
2002

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upa1744 Summary of contents

Page 1

DESCRIPTION The PA1744TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES Low on-state resistance MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Case Temperature - C C FORWARD BIAS SAFE OPERATING AREA 100 ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 0.2 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 Pulsed - 100 125 T - Channel Temperature - C ch ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 = 0.001 0.01 0 Inductive Load - mH 6 100 = ...

Page 7

The information in this document is current as of March, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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