upa1741 Renesas Electronics Corporation., upa1741 Datasheet

upa1741

Manufacturer Part Number

upa1741

Description

Switching N-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

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Document No. G16373EJ1V0DS00 (1st edition)

Date Published April 2003 NS CP(K)

Printed in Japan

DESCRIPTION

low on-state resistance and excellent switching characteristics, and

designed for high voltage applications such as DC/DC converter.

FEATURES

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Gate to Source Voltage (V

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Drain to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Single Avalanche Current

Single Avalanche Energy

Repetitive Avalanche Current

Repetitive Pulse Avalanche Energy

The PA1741TP is N-channel MOS FET device that features a

High voltage: V

Gate voltage rating: ±30 V

Low on-state resistance

Low input capacitance

Built-in gate protection diode

Small and surface mount package (Power HSOP8)

DS(on)

iss

PART NUMBER

= 340 pF TYP. (V

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

3. Starting T

4. T

PA1741TP

= 0.79

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

ch(peak)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

10 s, Duty Cycle

DSS

MAX. (V

150°C, L = 100 H

= 250 V

Note1

= 25°C, V

= 25°C)

Note3

= 10 V, V

Note3

= 25°C)

= 0 V)

= 10 V, I

= 0 V)

Note4

N-CHANNEL POWER MOS FET

= 125 V, R

Note4

Note2

Power HSOP8

PACKAGE

= 0 V)

= 2.5 A)

= 25°C, unless otherwise noted. All terminals are connected.)

DATA SHEET

D(pulse)

D(DC)

= 25

GSS

DSS

stg

SWITCHING

, L = 100 H, V

55 to +150

MOS FIELD EFFECT TRANSISTOR

±5.0

250

±30

±15

150

5.0

2.5

5.0

2.5

°C

= 20

PACKAGE DRAWING (Unit: mm)

5.2

0.40

4.1 MAX.

0 V

1.27 TYP.

+0.17

–0.2

2.0 ±0.2

+0.10

–0.05

PA1741TP

0.12 M

EQUIVALENT CIRCUIT

0.8 ±0.2

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8, 9 ; Drain

4.4 ±0.15

6.0 ±0.3

Source

; Source

; Gate

Drain

Body

Diode

0.10

2003

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upa1741 Summary of contents

Page 1

DESCRIPTION The PA1741TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES High voltage 250 V DSS Gate voltage rating: ±30 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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upa1741 Renesas Electronics Corporation., upa1741 Datasheet

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