upa1740 Renesas Electronics Corporation., upa1740 Datasheet

upa1740

Manufacturer Part Number

upa1740

Description

Switching N-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1740.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

low on-state resistance and excellent swiching characteristics, and

designed for high voltage applications such as DC/DC converter.

FEATURES

Notes 1. PW

The PA1740TP is N-channel MOS FET device that features a

High voltage: V

Gate voltage rating: 30 V

Low on-state resistance

Low input capacitance

Built-in gate protection diode

Small and surface mount package (Power HSOP8)

Avalanche capability rated

DS(on)

iss

PART NUMBER

= 420 pF TYP. (V

2. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

3. Starting T

4. T

G15937EJ1V0DS00 (1st edition)

May 2002 NS CP(K)

PA1740TP

= 0.44

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

125°C, V

10 s, Duty Cycle

DSS

MAX. (V

Note1

= 200 V

= 25°C, V

= 25°C)

Note3

= 10 V, V

= 100 V, R

= 25°C)

= 0 V)

Note4

= 0 V)

Note4

= 10 V, I

Power HSOP8

= 100 V, R

Note2

PACKAGE

N-CHANNEL POWER MOS FET

= 0 V)

= 3.5 A)

= 25

= 25°C, Unless otherwise noted, All terminals are connected.)

D(pulse)

D(DC)

GSS

DSS

= 25

stg

DATA SHEET

SWITCHING

MOS FIELD EFFECT TRANSISTOR

, L = 100 H, V

–55 to + 150

±7.0

200

±30

±21

150

1.0

7.0

4.9

7.0

2.2

= 20

°C

PACKAGE DRAWING (Unit: mm)

0 V

PA1740TP

5.2

0.40

4.1 MAX.

1.27 TYP.

+0.17

–0.2

2.0 ±0.2

+0.10

–0.05

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

0.8 ±0.2

1, 2, 3

5, 6, 7, 8, 9 : Drain

Source

Drain

4.4 ±0.15

6.0 ±0.3

: Source

: Gate

Body

Diode

0.10

2001

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upa1740 Summary of contents

Page 1

DESCRIPTION The PA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES High voltage 200 V DSS Gate voltage rating: 30 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Case Temperature - C C FORWARD BIAS SAFE OPERATING AREA 100 I = 7.0 ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1 Pulsed 1 7.0 A 0.8 D 0.6 3.5 A 0.4 0.2 0 -50 - 100 125 T - Channel ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 100 Starting T = 25°C ch 0.1 0.01 0.1 1 ...

Page 7

Data Sheet G15937EJ1V0DS PA1740TP 7 ...

Page 8

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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