upa1710 Renesas Electronics Corporation., upa1710 Datasheet
upa1710
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upa1710 Summary of contents
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DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. FEATURES • Low On-Resistance Max.(V DS(on 0.16 Max.(V DS(on)2 GS • Low C ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - °C a FORWARD BIAS SAFE OPERATING AREA -100 Mounted on ceramic substrate of ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V Pulsed T = -25 ° °C 75 °C 10 125 °C 1 0.1 -0.1 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 180 140 100 Pulsed I = ...
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REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application ...
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PA1710 7 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...