upa1710a Renesas Electronics Corporation., upa1710a Datasheet

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upa1710a

Manufacturer Part Number
upa1710a
Description
Switching P-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1710A.pdf (8 pages)

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa1710aG-E1
Manufacturer:
NEC
Quantity:
20 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
upa1710aG-E2
Manufacturer:
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Quantity:
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Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa1710aG-E2
Manufacturer:
NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management
Low on-resistance
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
iss
PA1710AG
G11497EJ1V1DS00 (1st edition)
November 1998 NS CP(K)
= 70 m
= 160 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
: C
iss
= 840 pF (TYP.)
10 s, Duty Cycle
(MAX.) (V
(MAX.) (V
Note1
DS
A
GS
= 25°C)
= 0 V)
GS
= 0 V)
GS
= –10 V, I
= –4 V, I
P-CHANNEL POWER MOS FET
Power SOP8
PACKAGE
Note2
1 %
A
D
D
= 25°C, All terminals are connected.)
= –2.5 A)
= –2.0 A)
INDUSTRIAL USE
I
D(pulse)
I
V
V
D(DC)
DATA SHEET
T
T
P
DSS
GSS
stg
SWITCHING
ch
T
2
x 1.1 mm
MOS FIELD EFFECT TRANSISTOR
–55 to + 150
PACKAGE DRAWING (Unit : mm)
±5.0
–30
±20
±20
150
2.0
8
1
5.37 Max.
0.40
1.27
+0.10
–0.05
°C
°C
W
V
V
A
A
0.78 Max.
5
4
0.12 M
PA1710A
EQUIVARENT CIRCUIT
1,2,3
4
5,6,7,8
Gate
Gate
Protection
Diode
0.5 ±0.2
6.0 ±0.3
; Source
; Gate
; Drain
4.4
©
Source
Drain
0.8
0.10
Body
Diode
1995

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upa1710a Summary of contents

Page 1

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. FEATURES Low on-resistance (MAX – DS(on 160 m (MAX.) ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA -100 Mounted ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = -25 ˚ ˚C 75 ˚C 125 ˚ 0.1 -0.1 -1 -10 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 160 120 - -50 0 100 150 Channel Temperature - ˚C ch CAPACITANCE ...

Page 6

PA1710A ...

Page 7

PA1710A 7 ...

Page 8

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...

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