upa1730tp Renesas Electronics Corporation., upa1730tp Datasheet

upa1730tp

Manufacturer Part Number

upa1730tp

Description

Switching P-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1730TP.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

MOS Field Effect Transistor designed for power management

applications of notebook computers and Li-ion battery protection

circuit.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec.

The PA1730TP which has a heat spreader is a P-Channel

Low on-state resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power HSOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

3. Starting T

2. PW

iss

PA1730TP

G15935EJ1V0DS00 (1st edition)

March 2002 NS CP(K)

= 9.5 m

= 13.5 m

= 15.0 m

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 3800 pF TYP.

10 s, Duty Cycle

Note1

MAX. (V

Note2

= 25°C , V

Note3

= 25°C )

= 0 V)

= –10 V, I

= –4.5 V, I

= –4.0 V, I

Power HSOP8

P-CHANNEL POWER MOS FET

= 15 V, R

PACKAGE

Note1

= –6.5 A)

= 25°C, Unless otherw ise noted, All terminals are connected.)

= –6.5 A)

D(pulse)

D(DC)1

D(DC)2

DATA SHEET

DSS

GSS

stg

= 25

SWITCHING

–55 to +150

, V

100

22.5

MOS FIELD EFFECT TRANSISTOR

–30

150

= 20

0 V

°C

PACKAGE DRAWING (Unit: mm)

5.2

4.1 MAX.

0.40

1.27 TYP.

+0.17

–0.2

2.0 ±0.2

+0.10

–0.05

EQUIVALENT CIRCUIT

Gate

0.12 M

PA1730TP

0.8 ±0.2

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8, 9 ; Drain

4.4 ±0.15

6.0 ±0.3

Source

Drain

; Source

; Gate

Body

Diode

0.10

2002

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upa1730tp Summary of contents

Page 1

P-CHANNEL POWER MOS FET DESCRIPTION The PA1730TP which has a heat spreader is a P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance R = 9.5 m ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Case Temperature - ˚C C FORWARD BIAS SAFE OPERATING AREA 1000 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 150˚ 125˚C 75˚C 25˚C 0.1 25˚C 50˚C 0.01 0.001 0.0001 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 4 6 100 150 T - Channel Temperature - ˚C ch ...

Page 6

Data Sheet G15935EJ1V0DS PA1730TP ...

Page 7

Data Sheet G15935EJ1V0DS PA1730TP 7 ...

Page 8

The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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