upa1816 Renesas Electronics Corporation., upa1816 Datasheet

upa1816

Manufacturer Part Number

upa1816

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1816.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

driven directly by a 1.8 V power source.

excellent switching characteristics, and is suitable for

applications such as power management of notebook

computers and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

This device features a low on-state resistance and

1.8 V drive available

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

DS(on)4

PART NUMBER

PA1816GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1816 is a switching device which can be

G16252EJ1V0DS00 (1st edition)

July 2002 NS CP(K)

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 15 m

= 16 m

= 22.5 m

= 41.5 m

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

MAX. (V

Note1

= 25°C)

Note2

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 2.5 V, I

= 1.8 V, I

Power TSSOP8

PACKAGE

= 4.5 A)

= 25°C)

= 4.5 A)

= 2.5 A)

FOR SWITCHING

D(pulse)

D(DC)

GSS

DATA SHEET

DSS

stg

x 1.1 mm

55 to +150

MOS FIELD EFFECT TRANSISTOR

150

2.0

8.0

9.0

3.15 ±0.15

3.0 ±0.1

0.27

0.65

°C

+0.03

–0.08

PACKAGE DRAWING (Unit: mm)

0.8 MAX.

0.10 M

1, 2, 3

5, 6, 7, 8: Drain

: Source

: Gate

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

4.4 ±0.1

PA1816

1.0 ±0.05

0.1 ±0.05

Source

Drain

–3

Body

Diode

0.5

0.6

1.0 ±0.2

0.25

0.1

+0.15

–0.1

2002

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upa1816 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA -100 I D(pulse) ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -40 Pulsed 4 4.5 V -30 GS -20 - -0.2 -0.4 -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 Pulsed T = 125° 75°C 25°C 25° -0.01 -0 Drain Current - A D DRAIN TO SOURCE ON-STATE ...

Page 6

SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 9 ...

Page 7

Data Sheet G16252EJ1V0DS PA1816 7 ...

Page 8

The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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