upa1819 Renesas Electronics Corporation., upa1819 Datasheet

upa1819

Manufacturer Part Number

upa1819

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1819.pdf (8 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa1819GR

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

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Document No. G16267EJ1V0DS00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

directly by a 4.0 V power source.

excellent switching characteristics, and is suitable for

applications such as power management of notebook

computers and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

This device features a low on-state resistance and

4.0 V drive available

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

PA1819GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1819 is a switching device that can be driven

= 12 m

= 18.5 m

= 22 m

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

MAX. (V

= 25°C)

Note2

= 0 V)

= 10 V, I

= 4.0 V, I

= 4.5 V, I

Power TSSOP8

PACKAGE

= 6.0 A)

= 25°C)

FOR SWITCHING

= 6.0 A)

D(pulse)

D(DC)

DATA SHEET

GSS

DSS

stg

x 1.1 mm

55 to +150

MOS FIELD EFFECT TRANSISTOR

m20

m12

m48

150

2.0

3.15 ±0.15

3.0 ±0.1

0.27

0.65

°C

+0.03

–0.08

PACKAGE DRAWING (Unit: mm)

0.8 MAX.

0.10 M

2, 3

6, 7

1, 2, 3:

5, 6, 7, 8: Drain

: Drain1

: Source1

: Gate1

: Gate2

: Source2

: Drain2

Source

Gate

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

PA1819

4.4 ±0.1

1.0±0.05

0.1±0.05

Source

Drain

–3

Body

Diode

0.5

0.6

1.0 ±0.2

0.25

0.1

+0.15

–0.1

2002

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upa1819 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 3

TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 50 Pulsed 4 0.2 - 0 Drain to Source Voltage - ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed T = 125 0. Drain ...

Page 6

DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 6 Gate Charge - ...

Page 7

Data Sheet G16267EJ1V0DS PA1819 7 ...

Page 8

The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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