upa1812gr-9jg Renesas Electronics Corporation., upa1812gr-9jg Datasheet

upa1812gr-9jg

Manufacturer Part Number

upa1812gr-9jg

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1812GR-9JG.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

driven directly by a 4.0-V power source.

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

The PA1812 features a low on-state resistance and

Can be driven by a 4.0-V power source

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

PA1812GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1812 is a switching device which can be

D12967EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

= 39 m

= 63 m

= 69 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

Note2

= –10 V, I

= –4.5 V, I

= –4.0 V, I

Power TSSOP8

PACKAGE

= –2.5 A)

The mark

= –2.5 A)

= 25°C)

FOR SWITCHING

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

–55 to +150

shows major revised points.

x 1.1 mm

–20/+5

±5.0

MOS FIELD EFFECT TRANSISTOR

–30

±20

150

2.0

3.15 ±0.15

3.0 ±0.1

0.27

0.65

°C

+0.03

–0.08

PACKAGE DRAWING (Unit : mm)

0.8 MAX.

0.10 M

1, 5, 8

2, 3, 6, 7: Source

: Drain

: Gate

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

PA1812

4.4 ±0.1

1.0±0.05

0.1±0.05

Source

Drain

–3

Body

Diode

0.5

0.6

1.0 ±0.2

1997, 1999

0.25

0.1

+0.15

–0.1

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upa1812gr-9jg Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1812 is a switching device which can be driven directly by a 4.0-V power source. The PA1812 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 125˚ 75˚C 25˚C 25˚ 0 Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE ...

Page 5

SWITCHING CHARACTERISTICS 1000 GS(on 100 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS ...

Page 6

Data Sheet D12967EJ2V0DS PA1812 ...

Page 7

Data Sheet D12967EJ2V0DS PA1812 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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