upa1808 Renesas Electronics Corporation., upa1808 Datasheet

upa1808

Manufacturer Part Number

upa1808

Description

N-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1808.pdf (6 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa1808GR

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

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Document No. G16250EJ1V0DS00 (1st edition)

Date Published August 2002 NS CP(K)

Printed in Japan

DESCRIPTION

directly by a 4.0 V power source.

excellent switching characteristics, and is suitable for

applications such as DC/DC converters and power

management of notebook computers and so on.

FEATURES

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

The PA1808 is a switching device, which can be driven

This device features a low on-state resistance and

4.0 V drive available

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

2. Mounted on ceramic substrate of 5000 mm

PART NUMBER

PA1808GR-9JG

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

= 17 m

= 23 m

= 26 m

10 s, Duty Cycle

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

MAX. (V

Note1

= 25°C)

Note2

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

= 0 V)

= 10 V, I

= 4.5 V, I

= 4.0 V, I

Power TSSOP8

PACKAGE

= 5.0 A)

= 25°C)

D(pulse)

D(DC)

DSS

GSS

stg

FOR SWITCHING

DATA SHEET

x 1.1 mm

55 to +150

MOS FIELD EFFECT TRANSISTOR

150

2.0

9.5

°C

3.15 ±0.15

3.0 ±0.1

0.27

0.65

PACKAGE DRAWING (Unit: mm)

+0.03

–0.08

0.8 MAX.

0.10 M

1, 2, 3

5, 6, 7, 8: Drain

EQUIVALENT CIRCUIT

Gate

Protection

Diode

: Source

: Gate

PA1808

Source

Drain

1.2 MAX.

6.4 ±0.2

4.4 ±0.1

1.0 ±0.05

0.1 ±0.05

Body

Diode

–3

0.5

0.6

1.0 ±0.2

2002

0.25

0.1

+0.15

–0.1

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upa1808 Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1808 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0.4 0.8 1 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.4 V ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ...

Page 6

The information in this document is current as of August, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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