upa1809 Renesas Electronics Corporation., upa1809 Datasheet - Page 4

• Manufacturer Part Number: upa1809
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.4
2.2
2.0
1.8
1.6
1.4
1.2
50
40
30
20
10
32
24
16
8
0
0
-50
0
-50
V
GS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
= 10 V
DS
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
ch
- Drain to Source Voltage - V
0.5
- Channel Temperature - C
- Channel Temperature - C
0
0
V
GS
= 4.0 V
4.5 V
4.5 V
1.0
50
50
4.0 V
10 V
1.5
100
100
Pulsed
I
V
I
D
D
DS
= 4.0 A
= 1.0 mA
Pulsed
= 10 V
2.0
150
150
Data Sheet G16273EJ1V0DS
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.0001
100
50
40
30
20
10
0.1
10
0
0.001
1
0.01
100
0.01
0
0.1
10
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
FORWARD TRANSFER CHARACTERISTICS
1.0
V
T
Pulsed
V
A
GS
DS
= 25 C
2
1.5
125 C
- Gate to Source Voltage - V
= 10 V
V
25 C
75 C
GS
0.1
I
D
- Gate to Source Voltage - V
- Drain Current - A
2.0
4
2.5
1
6
3.0
T
A
= 125°C
10
Pulsed
I
3.5
D
75°C
25°C
25°C
8
= 4.0 A
Pulsed
V
DS
= 10 V
4.0
PA1809
10
100
4.5