upa1804 Renesas Electronics Corporation., upa1804 Datasheet - Page 4

• Manufacturer Part Number: upa1804
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
10000
1000
100
10
20
40
30
10
10
20
50
40
30
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
50
V
f = 1 MHz
I
D
GS
V
= 4.0 A
GS
= 0 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 4.5 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Tch - Channel Temperature - ˚C
V
0.1
0
DS
I
- Drain Source Voltage - V
D
- Drain Current - A
T
A
= 125 ˚C
10
50
1
25 ˚C
75 ˚C
25 ˚C
100
C
10
C
V
C
oss
iss
GS
rss
= 4.5 V
10 V
Data Sheet D13868EJ2V0DS
100
150
100
1000
100
50
40
30
20
10
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
40
30
20
0
0.01
0.1
V
V
R
V
DD
GS(on)
G
GS
= 10
= 15 V
SWITCHING CHARACTERISTICS
= 10 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 10V
V
4
GS
0.1
- Gate to Source Voltage - V
I
D
I
D
- Drain Current - A
td
- Drain Current - A
(off)
8
T
A
1
= 125 ˚C
1
25 ˚C
td
75 ˚C
25 ˚C
(on)
12
10
I
D
16
= 4.0 A
tr
tf
PA1804
10
20
100