upa1855 Renesas Electronics Corporation., upa1855 Datasheet

upa1855

Manufacturer Part Number

upa1855

Description

Mos Field Effect Transistor

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1855.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

driven directly by a 2.5 V power source.

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

The PA1855 features a low on-state resistance and

Can be driven by a 2.5 V power source

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

PA1855GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1855 is a switching device which can be

D13454EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

= 23 m

= 24 m

= 29 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

Note2

= 4.5 V, I

= 4.0 V, I

= 2.5 V, I

D(pulse)

Power TSSOP8

D(DC)

GSS

DSS

stg

PACKAGE

1 %

= 3.0 A)

–55 to +150

= 25°C)

FOR SWITCHING

The mark

±6.0

150

±12

±24

2.0

DATA SHEET

x 1.1 mm

MOS FIELD EFFECT TRANSISTOR

shows major revised points.

°C

3.15 ±0.15

3.0 ±0.1

Gate1

Gate

Protection

Diode

0.27

0.65

PACKAGE DRAWING (Unit : mm)

+0.03

–0.08

0.8 MAX.

0.10 M

Source1

2, 3 :Source1

6, 7 :Source2

Drain1

EQUIVALENT CIRCUIT

:Drain1

:Gate1

:Gate2

:Drain2

Body

Diode

Gate2

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

4.4 ±0.1

PA1855

1.0±0.05

0.1±0.05

–3

Source2

Drain2

1998, 1999

0.5

0.6

1.0 ±0.2

0.25

0.1

Body

Diode

+0.15

–0.1

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upa1855 Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1855 is a switching device which can be driven directly by a 2.5 V power source. The PA1855 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4.5 V ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 125˚ 75˚ 25˚ -25˚ 0.01 0 Drain Current ...

Page 5

SWITCHING CHARACTERISTICS 1000 100 V = 10V 4. 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 6 ...

Page 6

Data Sheet D13454EJ2V0DS PA1855 ...

Page 7

Data Sheet D13454EJ2V0DS PA1855 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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