upa1858 Renesas Electronics Corporation., upa1858 Datasheet

upa1858

Manufacturer Part Number

upa1858

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1858.pdf (8 pages)

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Allchip Electronic(HK) Limited

Part Number:

upa1858GR-9JG-E2

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upa1858GR-9JG-E2-A

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Document No.G16276EJ1V0DS00 (1st edition)

Date Published October 2002 NS CP(K)

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

driven directly by a 2.5 V power source.

excellent switching characteristics, and is suitable for

applications such as power management of portable

machine and so on.

FEATURES

Notes 1. PW

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (2 units)

Channel Temperature

Storage Temperature

The

This device features a low on-state resistance and

2.5 V drive available

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

PA1858GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1858 is a switching device, which can be

= 24.5 m

= 25.5 m

= 38 m

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

MAX. (V

Note1

= 0 V)

= 2.5 V, I

= 4.5 V, I

= 4.0 V, I

Power TSSOP8

Note2

PACKAGE

= 2.5 A)

= 25°C)

FOR SWITCHING

= 2.5 A)

D(pulse)

D(DC)

DATA SHEET

DSS

GSS

stg

x 1.1 mm

55 to +150

m5.0

MOS FIELD EFFECT TRANSISTOR

m12

m20

150

2.0

3.15 ±0.15

3.0 ±0.1

0.27

0.65

°C

+0.03

–0.08

PACKAGE DRAWING (Unit: mm)

0.8 MAX.

Gate 1

Gate

Protection

Diode

2, 3

6, 7

0.10 M

: Drain1

: Source1

: Gate1

: Gate2

: Source2

: Drain2

Source 1

EQUIVALENT CIRCUITS

Drain 1

Body

Diode

1.2 MAX.

PA1858

6.4 ±0.2

4.4 ±0.1

1.0±0.05

0.1±0.05

Gate 2

–3

Gate

Protection

Diode

0.5

0.6

1.0 ±0.2

Source 2

0.25

0.1

Drain 2

+0.15

–0.1

2002

Body

Diode

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upa1858 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1858 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 R ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 4 0.2 - 0 Drain to Source Voltage - V DS GATE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 Pulsed 125 0. ...

Page 6

DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 5 4 Gate Charge - ...

Page 7

Data Sheet G16276EJ1V0DS PA1858 7 ...

Page 8

The information in this document is current as of October, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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